2015年2月11日星期三

PTFA092213EL V4 PTFA092213 - 220 W, 920-960 MHz High Power RF LDMOS FETs

PTFA092213EL V4 PTFA092213 - 220 W, 920-960 MHz High Power RF LDMOS FETs


Part Number
Brand
Package
Date
Remark
PTFA092213EL
Original Manufacture
Standard
15+ 
New and original



















Features:
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant




















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1. We will ship all your order within 3 working days after receiving your payment. Otherwise, we will state it in the invoice in advance.
2. We can Ship via your shipping account (DHL / FEDEX / UPS / TNT or others) as your instruction. Or Ship via our shipping account (We have good relationship with DHL and FEDEX with very special freight).
3. Regarding the declared value on the package for customs clearance, we are pleased to follow your wishes, just feel free to inform us when ordering.
4. Any import fees or charges are the buyer responsibility.

[Refund & Replacement]
You will receive a 30-360 days form, fit, and function of part warranty to make sure you receive exactly what you ordered.

[Buying Excess & Surplus excess stocks of Electronic Components]
MICROCHIP semiconductor purchase the excess and surplus stocks inventory.

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